nanowire field effect transistor Search Results


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Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
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Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
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nanowire field-effect transistor  (Schmid GmbH)
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Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
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pspice model for silicon nanowire field-effect transistor biosensors  (Verlag GmbH)
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Verlag GmbH pspice model for silicon nanowire field-effect transistor biosensors
Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a <t>nanowire</t> device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .
Pspice Model For Silicon Nanowire Field Effect Transistor Biosensors, supplied by Verlag GmbH, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a nanowire device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .

Journal: Biosensors & Bioelectronics

Article Title: Recent advances in nanowires-based field-effect transistors for biological sensor applications

doi: 10.1016/j.bios.2017.09.024

Figure Lengend Snippet: Normalized electrical output ( I / I 0 ) vs. time of a single operating device. (a-b) Response curves to passivation upon addition of successive aliquots of BSA. (c) Response for a nanowire device functionalized with Fn. Inset (1) is the device configuration during active sensing measurement. Inset (2) shows the plateau and the definition of response time. Inset (3) is schematic of a control device without Fn capture probe does not respond to the presence of N protein. Images reprinted from .

Article Snippet: Nanowires (NWs)-based field-effect transistors (FETs) have attracted considerable interest to develop innovative biosensors using NWs of different materials (i.e. semiconductors, polymers, etc.).

Techniques: Control